 IGQ1000-IT.pdf
Description
1mm diameter Low Dark Current InGaAs Quadrant
Photodiode with P on N construction and 20um gaps.
Packaged in a TO-5 with a hermetic ultra flat fused
silicon glass window cap.
Features
* 1mm diameter active area
* Small gap
* Low dark current
* Low crosstalk
General Ratings
* High linearity
* High reliability
Applications
* Laser beam position sensor
* Minuteness process controller
* Optical tweezers
* Laser guidance
Absolute Maximum Ratings (Ta=25℃)
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