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OSD9-30-IB

 

Description
The OSD9-30-IB is a high sensitive silicon planar photo-
Diode array in a inline configuration.
30cells single photodiode chips with a common cathode
Are mounted in DIP package with flat resin molding.
Each chip measure 3mm by 3mm and provides a radiant
Sensitive area of 7.2mm2.

Features
* High-speed response
* High photo sensitivity
* High reliability in demanding environments
* Operating temperature is from -40 to +100℃
* Storage temperature is from -40 to +100℃
* soldering temperature is 260℃ @Max.5 seconds at the position of 2mm from the PIN legs.

General Ratings
* Type Silicon Photodiode 
* Chip active area: 3*3*16mm2
* Low dark current 
* gap of each element: 50.0um
 
Applications
* optical switcher 
* pulse laser detector
* Automatic sensor 
* Industry machine
 
 
Absolute Maximum Ratings (Ta=25℃)
 
 
 
 

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