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OSD9-81C

OSD9-81C.pdf

Description:
The OSD9-81C is 800-1100nm response high-output, high-speed silicon photo diode which is mounted in 2PIN ceramic package, permits wide angular response.  

Applications:

*Laser detect
* Instrument equipment

Notes: All dimension are in millimeters. 

Absolute Maximum Ratings (Ta=23℃):
Parameter Symbol Condition Min. Typ. Max. Unit
Chip size size - 3.17*3.17 mm2
Active area A - 2.84*2.84 mm2
Dark current ID VR=10mV   10   pA
VR=10V   64  
Rise time tR VR=0V;λ=850nm;RL=50ῼ   280   ns
Tempcoeffi-cient of ID TCID     0.18   times/℃
Reverse breakdown voltage V(BR)R IR=100uA Ev=0mw/cm2 33     V
Junction Capacitance CJ VR=0V f=1MHz Ee=0mW/cm2   66   pF
VR=5V f=1MHz Ee=0mW/cm2   20  
Photo sensitivity SR 940nm   0.55   A/W
Spectral Application Range λrange   780   1100 nm
Spectral Response-Peak λp     940   nm
Shunt resistance Rsh VR=10mV   0.1   Gῼ
Angular Resp 50% Resp Pt θ1/2     ±20   Degrees

 

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