OSD9-61C_OTRON SENSOR

Chinese

Products

Navigation

Current location:OTRON SENSOR > Products

OSD9-61C

OSD9-61C.pdf

Description:
The OSD9-61C is 600-1100nm response high-output, high-speed silicon photo diode which is mounted in 2PIN ceramic package, permits wide angular response.

Applications:
*Laser detect
* Instrument equipment

Notes: All dimension are in millimeters.

Absolute Maximum Ratings (Ta=23℃):

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Chip size	size	-	3.17*3.17			mm2
Active area	A	-	2.84*2.84			mm2
Dark current	ID	VR=10mV		20		pA
Dark current	ID	VR=10V		66		pA
Rise time	tR	VR=0V;λ=635nm;RL=50ῼ		300		ns
Tempcoeffi-cient of ID	TCID			0.18		times/℃
Reverse breakdown voltage	V(BR)R	IR=100uA Ev=0mw/cm2	33			V
Junction Capacitance	CJ	VR=0V f=1MHz Ee=0mW/cm2		18		pF
Junction Capacitance	CJ	VR=5V f=1MHz Ee=0mW/cm2		12		pF
Photo sensitivity	SR	635nm		0.55		A/W
Spectral Application Range	λrange		600		1100	nm
Spectral Response-Peak	λp			940		nm
Shunt resistance	Rsh	VR=10mV		0.5		Gῼ
Angular Resp 50% Resp Pt	θ1/2			±20		Degrees