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OSQ50-IT

OSQ50-IT.pdf

Description
50mm2 low dark current quadrant photodiode 
with P on N construction and 50um gaps. 
Packaged in a TO-8 with non-hermetic 
ultra flat fused silicon glass
window gap. It is case isolated package.
 
Features
*50mm2 active area
*Small gap
*Low dark current
*High resolution
*Operating temperature is from -40 to +100℃
*Storage temperature is from -40 to +100℃
*soldering temperature is 260℃ @Max.5 seconds 
at the position of 2mm from the PIN legs.
 
General Ratings
*Type Silicon Photodiode
*Chip active area:φ 8.0mm dia.
*High linearity
*Low dark current
 
Applications
*Laser beam position sensor
*Autocollimators
*Optical tweezers
*Ellipsometers
 
 
 Absolute Maximum Ratings (Ta=25℃)
 
 
 
 
APPLICATION  CIRCUIT
 
 

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