Description
16mm2 Low Dark Current Quadrant Photodiode
with P on N construction and 25.4um gaps.
Packaged in a TO-8 with a non-hermetic
ultra flat fused silicon glass window
cap. Also available with case isolated
package.
Features
*16mm2 active area
*Small gap
*Low dark current
*High resolution
General Ratings
*Type Silicon Photodiode
*Chip active area: 2.0mm*2.0mm*4
*High linearity
*Low dark current
Applications
*Laser beam position sensor
*Autocollimators
*Optical tweezers
*Ellipsometers
Absolute Maximum Ratings (Ta=25℃)
APPLICATION CIRCUIT
