 OSQ10-IC.pdf
Description
Ф10 mm active area , low Dark Current
Quadrant Photodiode with P on N construction
and 40um gaps. Packaged in a ceramic stem
package with resin coating.
Features
*Ф10 mm active area
*Small gap (40um)
*Low dark current
*Operating temperature is from -40 to +80℃
*Storage temperature is from -40 to +100℃
*soldering temperature is 260℃ @Max.5
seconds at the position of 2mm from the PIN legs.
General Ratings
*Type Silicon quadrant photodiode
*Chip active area: Ф10 mm
Applications
*Laser beam position sensor
*Autocollimators
*Optical tweezers
*Ellipsometers
*Solar tracking system
*Laser beam axis alignment
Absolute Maximum Ratings (Ta=25℃)
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